Ti₂AlN is a nanolaminate: metallic Ti₂N blocks (edge-sharing Ti₆N octahedra) interleaved with single Al planes. Used as the bottom electrode of an HfO₂ memristor, it supports filamentary resistive switching.
TiNAlOxygen vacancy (VO)O²⁻ ion
Ti₂AlN · 211 structure
Memristor stack
Current–voltage loop
HRS · OFF
Push V above the set voltage: O²⁻ ions drift toward the top electrode, leaving a vacancy filament that bridges the oxide (low-resistance state). A negative bias returns oxygen and ruptures the filament tip (high-resistance state). Values are illustrative.