Our Research

Broad-based, cross-disciplinary research spanning the development and fundamental understanding of electronic materials, devices, and circuits.

MAX Phase for Memory Devices

MAX-phase materials (Mn+1AXn) exhibit layered structures combining metallic (M₂X) and ceramic (A) properties. The group has demonstrated MAX Phase Ti₂AlN as an electrode for HfO₂ memristors, achieving ultra-low reset current density and large on/off ratio. Recent work focuses on low-temperature formation of Ti₂AlN via post-deposition annealing.

Key Publications

  • Athena et al., Adv. Funct. Mater. 34(29), 2024
  • Nnaji et al., J. Appl. Phys. 136(11), 2024
  • Kurup et al., IEEE EDL, 2024

MAX Phase for Permeation Barriers in Nuclear Reactors

MAX-phase materials exhibit high thermal stability, irradiation and oxidation resistance, making them ideal for extreme environments. Coatings act as protective barriers against corrosive hydrogen gas during nuclear reactor operation. In collaboration with SRNL, the group measures hydrogen permeation to quantify coating effectiveness. Current efforts focus on reducing synthesis temperature.

Key Publications

  • Nnaji et al., J. Appl. Phys., 2024

The Indium Selenide (In-Se) Material System

The indium selenide family encompasses a rich set of layered van der Waals semiconductors with distinct structures and properties, each offering different opportunities for device applications. InSe (indium monoselenide) is a direct-bandgap 2D semiconductor with high electron mobility and strong light–matter coupling, making it attractive for field-effect transistors and photodetectors. In₂Se₃ exists in several polymorphs: β-In₂Se₃ is a layered semiconductor with complementary optical and electronic properties explored for optoelectronics; α-In₂Se₃ is a ferroelectric semiconductor in which the middle selenium atom in the Se-In-Se-In-Se quintuple layer can reversibly shift between two stable positions, flipping the out-of-plane electric polarization — an effect that persists at room temperature and requires no applied bias to maintain. This non-volatile switching behavior makes α-In₂Se₃ a compelling candidate for artificial synapses and low-power neuromorphic computing. The group synthesizes phase-controlled In-Se films by molecular beam epitaxy (MBE), enabling direct comparison of phases grown under identical conditions, and investigates the roles of stoichiometry, substrate, and defects on phase stability and ferroelectric performance.

Key Publications

  • Athena, Voigt, Tian et al., Adv. Science, 2025
  • Voigt et al., J. Appl. Phys. 135(21), 2024
  • Voigt et al., JVST-A 42(3), 2024

Nanopores for Protein & Nanoparticle Detection

Nanopore sensors detect proteins, cells, viruses, and nanoparticles through their influence on ionic current. As a molecule translocates through a nanometer-scale pore in a membrane, it partially blocks the current — larger molecules cause larger current drops. This enables label-free, single-molecule detection.

Key Publications

  • Kim, Baughman et al., Sensors and Actuators B: Chemical, 2025

Hybrid Biological Electronic Sensors

Electrochemical biosensors enable mobile, fast, and low-concentration biochemical detection, expanding healthcare access. The group develops Extended-Gate FETs (EGFETs) for protein and bacteria detection, Self-Assembled Monolayer (SAM) research for enhanced biomolecular detection, and uses graphene and 2D materials for stable sensing surfaces. Recent work includes EGFET-based airborne E. coli detection and GPCR-based hydrogel sensors.

Key Publications

  • Kim et al., Sensors and Actuators B, 2025
  • Gezahagne et al., J. Colloid Interface Sci. 668, 2024
  • Jin et al., J. Appl. Phys. 134(17), 2023