Electronic Devices & Materials
Performing broad-based, cross-disciplinary research that spans the development and fundamental understanding of electronic materials, devices, and circuits.
Explore Our ResearchFrom resistive memory devices and ferroelectric semiconductors to 2D material synthesis and nanopore biosensors — bridging fundamental science with real-world applications.
HfO₂-based resistive memory devices with MAX-phase Ti₂AlN electrodes for ultra-low reset current and neuromorphic computing. Also explores ferroelectric In₂Se₃ for ferro-FETs and capacitors with non-volatile polarization switching.
Phase-controlled growth of the indium selenide (In-Se) family — InSe, α- and β-In₂Se₃ — by molecular beam epitaxy. Alongside MAX-phase Ti₂AlN thin films for memory device electrodes and hydrogen permeation barriers in nuclear reactor applications.
Nanopore sensors for label-free single-molecule detection of proteins and nanoparticles. EGFET-based biosensors for protein and bacteria detection, including airborne E. coli, using graphene and SAM-functionalized surfaces.
Our most recent peer-reviewed contributions.
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Researchers working at the frontier of electronic materials and devices.
Take a virtual tour of the Vogel Group laboratory facilities.
Hightower Professor, MSE
345 Ferst Dr., N.W.
Marcus Nanotechnology Building, Rm. 2133
Atlanta, GA 30332
(404) 385-7235