Electronic Devices & Materials
Performing broad-based, cross-disciplinary research that spans the development and fundamental understanding of electronic materials, devices, and circuits.
Explore Our ResearchHfO₂-based resistive memory devices with MAX-phase Ti₂AlN electrodes for ultra-low reset current and neuromorphic computing. Also explores ferroelectric In₂Se₃ for ferro-FETs and capacitors with non-volatile polarization switching.
Phase-controlled growth of the indium selenide (In-Se) family — InSe, α- and β-In₂Se₃ — by molecular beam epitaxy. Alongside MAX-phase Ti₂AlN thin films for memory device electrodes and hydrogen permeation barriers in nuclear reactor applications.
Nanopore sensors for label-free single-molecule detection of proteins and nanoparticles. EGFET-based biosensors for protein and bacteria detection, including airborne E. coli, using graphene and SAM-functionalized surfaces.
Hightower Professor, MSE
345 Ferst Dr., N.W.
Marcus Nanotechnology Building, Rm. 2133
Atlanta, GA 30332
(404) 385-7235